| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10365717 | Microelectronics Reliability | 2014 | 7 Pages |
Abstract
This paper reviews wafer-level hermetic packaging technology using anodic bonding from several reliability points of view. First, reliability risk factors of high temperature, high voltage and electrochemical O2 generation during anodic bonding are discussed. Next, electrical interconnections through a hermetic package, i.e. electrical feedthrough, is discussed. The reliability of both hermetic sealing and electrical feedthrough must be simultaneously satisfied. In the last part of this paper, a new wafer-level MEMS packaging material, anodically-bondable low temperature cofired ceramic (LTCC) wafer, is introduced, and its reliability data on hermetic sealing, electrical interconnection and flip-chip mounting on a printed circuit board (PCB) are described.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Shuji Tanaka,