| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10365719 | Microelectronics Reliability | 2014 | 4 Pages |
Abstract
The fast recovery behavior in negative bias temperature instability (NBTI) in SiON gate p-type metal-oxide-silicon field effect transistors was investigated. The fast recovery is due to the hole detrapping from the K-center (N3Si, where denotes a dangling bond). The Gaussian function-like hole trap energy level distribution explains the universality in the fast recovery. The results shed light on the NBTI mechanism.
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Authors
Yoshiki Yonamoto,