| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10567445 | Journal of Power Sources | 2011 | 7 Pages |
Abstract
⺠The addition of 1 mol% ZnO significantly increases both the apparent and specific grain boundary conductivities of Ce0.8Ln0.2O1.9 (Ln = Y, Sm, Gd). ⺠The phenomenon of Si-enrichment was observed on the surfaces of some ZnO-added samples. ⺠1 mol% ZnO-doping promotes densification, and reduces the sintering temperature for 200 °C.
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Authors
Lin Ge, Shujun Li, Yifeng Zheng, Ming Zhou, Han Chen, Lucun Guo,