Article ID Journal Published Year Pages File Type
10568217 Journal of Power Sources 2005 8 Pages PDF
Abstract
The semiconductor bandgaps of Bi2O3, WO3 and Bi2WO6 were found to be 0.2 eV, in agreement with previously reported results. Two sample preparation techniques have been considered-solid-state processing and viscous processing techniques. A custom-built, computerised micro-coextrusion system has been used to prepare intermediate compounds from the WO3-Bi2O3 binary oxide system and the design and optimisation of this technique are discussed.
Related Topics
Physical Sciences and Engineering Chemistry Electrochemistry
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