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Implications of electron beam irradiation on Al/n-Si Schottky junction properties

Article ID Journal Published Year Pages File Type
11002904 Microelectronics Reliability 2018 6 Pages PDF
Keywords
Schottky barrier heightInterface trapsSynchrotronXPSEffective work functionElectron beam irradiation
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Implications of electron beam irradiation on Al/n-Si Schottky junction properties
Authors
Indudhar Panduranga Vali, Pramoda Kumara Shetty, M.G. Mahesha, V.C. Petwal, Jishnu Dwivedi, D.M. Phase, R.J. Choudhary,
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Microelectronics Reliability
Journal: Microelectronics Reliability
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Schottky barrier height
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Electron beam irradiation
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