| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 11016423 | Microelectronics Reliability | 2018 | 6 Pages |
Abstract
This paper presents an analysis of the reliability of 20â¯nm technology NAND Flash memory components based on Multiple Level Cells (MLC). The focus of the study is to assess the influence of temperature during programming, storage and reading operations. In order to reach this goal, several memories were programmed once at many temperatures ranging from â40â¯Â°C to 85â¯Â°C, then they have been stored powered off in one case and have been activated in reading in the other case, under different thermal stresses.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Julien Coutet, François Marc, Flavien Dozolme, Romain Guétard, Aurélien Janvresse, Pierre Lebossé, Antonin Pastre, Jean-Claude Clement,