Article ID Journal Published Year Pages File Type
11016444 Microelectronics Reliability 2018 5 Pages PDF
Abstract
Because of the atomic nature of the system under study, an estimation of the temperature of the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be obtained by means of indirect methods, usually electrothermal simulations. In this paper, a heuristic approach that combines time-dependent dielectric breakdown (TDDB) statistics for the electroformed device with field and temperature-assisted ionic transport within the framework of escape rate theory is presented. Extended expressions for the time-to-failure acceleration law (E-model) and for the Kramers' rate compatible both with the standard models at moderate/high biases and with the principle of detailed balance at equilibrium are proposed. An approximate expression for the CF temperature is reported. For the investigated stress voltage range (0.30 V-0.65 V), the estimated CF temperature at the SET condition is found to be in the range 350 K-600 K.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
, , , ,