Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11016444 | Microelectronics Reliability | 2018 | 5 Pages |
Abstract
Because of the atomic nature of the system under study, an estimation of the temperature of the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be obtained by means of indirect methods, usually electrothermal simulations. In this paper, a heuristic approach that combines time-dependent dielectric breakdown (TDDB) statistics for the electroformed device with field and temperature-assisted ionic transport within the framework of escape rate theory is presented. Extended expressions for the time-to-failure acceleration law (E-model) and for the Kramers' rate compatible both with the standard models at moderate/high biases and with the principle of detailed balance at equilibrium are proposed. An approximate expression for the CF temperature is reported. For the investigated stress voltage range (0.30â¯V-0.65â¯V), the estimated CF temperature at the SET condition is found to be in the range 350â¯K-600â¯K.
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Authors
A. Rodriguez-Fernandez, J. Muñoz-Gorriz, J. Suñé, E. Miranda,