| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 11016447 | Microelectronics Reliability | 2018 | 7 Pages |
Abstract
For some excursions detected by the fast diagnostic stresses the effect on the device lifetimes will be analysed with long term MOS device stresses. The physical reason for this will be discussed in a simple model of the devices' band structures.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
D. Beckmeier, A. Martin,