Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11016454 | Microelectronics Reliability | 2018 | 5 Pages |
Abstract
This paper presents a method to measure the threshold voltage degradation ÎVth along the channel direction due to electrical stress in MOSFETs. This method uses ÎVths measured after electrical stress at different drain bias Vds, and calculated the depletion length Ldep into the channel for each condition under which ÎVth is measured. By substituting ÎVth and Ldep into the proposed equation, the amount of degradation generated in each region of the MOSFET channel can be calculated. The ÎVth profiles of OFF-state stress and negative bias temperature instability in pMOSFET and hot carrier injection in nMOSFET were extracted using the proposed method. The degradation profiles correspond well with each stress characteristic.
Keywords
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Yeohyeok Yun, Ji-Hoon Seo, Donghee Son, Bongkoo Kang,