| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 11016508 | Microelectronics Reliability | 2018 | 7 Pages |
Abstract
If the electronic components (semiconductor) are exposed to HPEM, the semiconductor will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductor is vulnerable to external stress factor such as the coupled electromagnetic pulse. By injecting Damped Sinusoidal Pulse to the semiconductor devices, were observed the increase of leakage current and the physical damage.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
D.S. Kim, J.H. Choi, N.C. Park, S.I. Chan, Y.C. Jeong,