Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1287918 | Journal of Power Sources | 2006 | 4 Pages |
Abstract
The effect of deposition temperature and film thickness on the electrochemical performance of amorphous-Si thin films deposited on a copper foil is studied. The electrochemical properties show optimum conditions at 200 °C deposition, and thinner films exhibit superior electrochemical performance than thicker ones. A film of 200 nm Si deposited at 200 °C exhibits excellent cycleability with a specific capacity of ∼3000 mAh g−1. This is probably due to optimization between the strong adhesion by Si/Cu interdiffusion and the film stress.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Taeho Moon, Chunjoong Kim, Byungwoo Park,