Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1293750 | Journal of Power Sources | 2010 | 5 Pages |
Abstract
Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100 °C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO:N thin films grown in the same gas ambient. As a result, ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.
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Authors
Sudhakar Shet, Kwang-Soon Ahn, Todd Deutsch, Heli Wang, Ravindra Nuggehalli, Yanfa Yan, John Turner, Mowafak Al-Jassim,