Article ID Journal Published Year Pages File Type
148236 Chemical Engineering Journal 2014 7 Pages PDF
Abstract

•We have synthesized dense and long horizontally aligned SWNT arrays.•A simple dip-coating catalysts method was employed for the CVD growth.•The density and length of the CNT arrays could be well controlled by growth parameters.•The control mechanism involving catalyst behaviors was elaborately discussed.

Horizontally aligned carbon nanotubes (CNTs) with tunable length and density on flat substrates promise great opportunities for next-generation nanoelectronics. We utilized chemical vapor deposition (CVD) method to grow ultralong CNT arrays on Si/SiO2 substrate under various growth conditions. We found that growth parameters, such as catalyst solution concentration, pretreatment time, and growth temperature, could provide a mediated platform to control the morphology of the CNTs by means of modifying the catalyst properties. The catalytic behaviors of the nanoparticles affected by the growth parameters were elaborately discussed. With the emphasis of growth condition in the CVD growth methodology, controllable synthesis of CNTs will reach a new level and enlighten the achievement of high-performance CNT-based nanodevices.

Graphical abstractGrowth conditions in CVD method provide a mediated platform to control the density and length of horizontally aligned single-walled carbon nanotube arrays by means of modifying the catalyst properties.Figure optionsDownload full-size imageDownload as PowerPoint slide

Related Topics
Physical Sciences and Engineering Chemical Engineering Chemical Engineering (General)
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