Self-catalytic growth and characterization of composite (GaN, InN) nanowires

Composite nanowires consisting of GaN and InN phases were synthesized by heating a mixture of GaN and In powders. The tip nanoparticles also contained GaN and InN phases, in which the InN phases were favored at a lower growth temperature of 600 °C. The associated growth mechanisms are believed to involve a self-catalytic vapor–solid–liquid process, in which the composite nanoparticles located at the tips of the nanowires served as a catalyst. Both the Raman and photoluminescence spectra showed GaN- and InN-related peaks, which agrees with the X-ray diffraction and transmission electron microscopy data.