Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
151755 | Chemical Engineering Journal | 2010 | 8 Pages |
Abstract
Composite nanowires consisting of GaN and InN phases were synthesized by heating a mixture of GaN and In powders. The tip nanoparticles also contained GaN and InN phases, in which the InN phases were favored at a lower growth temperature of 600 °C. The associated growth mechanisms are believed to involve a self-catalytic vapor–solid–liquid process, in which the composite nanoparticles located at the tips of the nanowires served as a catalyst. Both the Raman and photoluminescence spectra showed GaN- and InN-related peaks, which agrees with the X-ray diffraction and transmission electron microscopy data.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Hyoun Woo Kim, Hyo Sung Kim, Han Gil Na, Ju Chan Yang, Sang Sub Kim, Chongmu Lee,