Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1786225 | Current Applied Physics | 2014 | 5 Pages |
Abstract
We report magnetoresistance for silicon based magnetic tunnel junction. We used cobalt ferrite & cobalt nickel ferrite as free layer and pinned layer. The magnetoresistance measured at room temperature through silicon by fabricating FM/Si/FM magnetic tunnel junction. Magnetoresistance shows a loop type behavior with 3.7%. We have successfully demonstrated spin tunneling through silicon with ferrite junction that opens the door for potential candidate for spintronics devices. The spin-filtering effect for this double spin-filter junction is also discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S. Ravi, A. Karthikeyan, N. Angel Nesakumari, K.S. Pugazhvadivu, K. Tamilarasan,