Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure

•Low Power RRAM using SiOx/a-Si/TiOy dielectric has low switching energy of <10 pJ.•The 1D1R-like structure design can reach very uniform switching for LRS and HRS.•The proposed RRAM owns fast 50 ns speed, tight current distribution and 106 cycles.•Such good performance is attributed to the incorporation of diode-like Ni/SiOx/a-Si.

In this study, we report a resistive random access memory (RRAM) using trilayer SiOx/a-Si/TiOy film structure. The low switching energy of <10 pJ, highly uniform current distribution (<13% variation), fast 50-ns speed and stable cycling endurance for 106 cycles are simultaneously achieved in this RRAM device. Such good performance can be ascribed to the use of interface-engineered dielectric stack with 1D1R-like structure. The SiOx tunnel barrier in contact with top Ni electrode to form diode-like rectifying element not only lowers self-compliance switching currents, but also improves cycling endurance, which is favorable for the application of high-density 3D memory.