| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971144 | Microelectronics Journal | 2017 | 5 Pages |
Abstract
In this paper, the relation between the number of gates and radiation resiliency, in Junctionless (JLT) devices, is investigated using 3D-TCAD simulation. JLT Devices having single, double, triple and quadruple-gate JLTs are studied for their single-event transient (SET) and single-event upset (SEU) radiation performance. The SEU performance enhances with the number of gates, and follows a linear trend.
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Physical Sciences and Engineering
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Authors
N. Vinodhkumar, R. Srinivasan,