| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971352 | Microelectronics Journal | 2016 | 6 Pages |
Abstract
An improved equivalent circuit model of the short test structure for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device modeling is proposed in this paper. The skin effect of the feedlines is taken into account in the proposed model. The corresponding de-embedding method which is different from the conventional open/short de-embedding method is also presented here. A semi-analytical method has been used to determine the MOSFET small signal model parameters. Good agreement is obtained between the simulated and measured results for 90Â nm MOSFETs in the frequency range of 1-40Â GHz.
Keywords
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Ying Zhou, Panpan Yu, Na Yan, Jianjun Gao,