| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971450 | Microelectronics Reliability | 2017 | 8 Pages |
Abstract
Multiple-gate (MG) MOSFETs are promising candidates for next-generation integrated circuits technology. This paper presents the electrothermal characterization of three-type nanoscale MG MOSFETs, i.e., Π-gate, quadruple-gate (QG), and Ω-gate MOSFETs. Meanwhile, the temperature distribution of a real Ω-gate MOSFET with gradual channel width is also studied. Finite difference method (FDM) is adopted to solve the 3-D time-dependent heat conduction equations. The simulation results of the steady-state temperature distribution are validated against the commercial software COMSOL. Moreover, the transient temperature response of MG MOSFETs to different waveforms are also captured and compared.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Qi-Lin Gu, Peng Zhang, Yi Ru, Hao Song, Wen-Sheng Zhao, Wen-Yan Yin,