| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971520 | Microelectronics Reliability | 2017 | 6 Pages |
Abstract
Emission characteristics of GaAs based pseudomorphic HEMT (PHEMT) and silicon based ICs were discussed in this paper corresponding to some possible consequences caused by metal defect. We proposed a dynamic emission microscopy method to solve the GaAs based high speed digital circuit open failure consist of DCFL inverters and performed a backside analysis on silicon based flipchip IC with metal bridge defect.
Keywords
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Chen Xuanlong, Liu Liyuan, Li Enliang,