| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971568 | Microelectronics Reliability | 2017 | 4 Pages |
Abstract
For the experimental validation metal-oxide-semiconductor (MOS) capacitors are fabricated and stressed by voltage and temperature. The received reliability data fit the theoretical predictions within the statistical variations.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
A. Hirler, J. Biba, A. Alsioufy, T. Lehndorff, T. Sulima, H. Lochner, U. Abelein, W. Hansch,