Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4971578 | Microelectronics Reliability | 2017 | 5 Pages |
Abstract
Time dependent dielectric breakdown degrades the reliability of SRAM cache. A novel methodology to estimate SRAM cache reliability and performance is presented. The performance and reliability characteristics are obtained from activity extraction and Monte Carlo simulations, considering device dimensions, process variations, the stress probability, and the thermal distribution. Based on the reliability-performance estimation methodology, caches with various settings on associativity, cache line size, and cache size are analysed and compared. Experiments show that there exists a contradiction between performance and reliability for different cache configurations. Understanding the variation of performance and reliability can provide SRAM designers with insight on reliability-performance trade-offs for cache system design.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Rui Zhang, Taizhi Liu, Kexin Yang, Linda Milor,