Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4971590 | Microelectronics Reliability | 2017 | 5 Pages |
Abstract
In this paper we show the full picture of hot carrier accelerated TDDB from static single transistor tests to AC stress and finally, to real product assessments. The different influencing factors like voltage, temperature and Vth are shown to be similar for all stress types. Moreover, an AC frequency dependency - that can be explained by the considerable lifetime of hot carriers - results in a further reduction of the breakdown time. The field relevance is assessed by long term (4000Â h) HTOL product tests.
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Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Rainer Duschl, Armin H. Fischer, Achim Gratz, Robert Wiesner,