| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971592 | Microelectronics Reliability | 2017 | 5 Pages |
Abstract
This paper evaluates the impact of aging on the radiation sensitivity of 6T SRAM for two planar bulk technologies. This study is motivated by the growing impact of aging and radiation effects on the reliability of CMOS technology. A modelling methodology dedicated to this new phenomenon is proposed. This modelling uses the radiation modelling device MUSCA SEP3 and an electrical aging modelling. First, the impact of aging on SEE sensitivity is studied through a parametric modeling of the threshold voltages of the transistors composing the 6T SRAM. Then, an operative avionics environment is modelled in order to evaluate the consequences on reliability.
Related Topics
Physical Sciences and Engineering
Computer Science
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Authors
T. Rousselin, G. Hubert, D. Régis, M. Gatti, A. Bensoussan,