Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4971603 | Microelectronics Reliability | 2017 | 5 Pages |
Abstract
By means of Scanning Near-field Thermal Microscopy and with the support of equivalent thermal circuit modelling the transition from diffusive in-plane heat flux to ballistic Stefan-Boltzmann like out-of-plane heat flux from a nanoscale heat source is demonstrated. The results obtained on atomic layer deposited thin amorphous films with a thickness larger than the phonon mean-free path will significantly influence the thermal management and reliability investigations of modern devices based on thin film technology.
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Hardware and Architecture
Authors
R. Heiderhoff, T. Haeger, K. Dawada, T. Riedl,