| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971607 | Microelectronics Reliability | 2017 | 6 Pages |
Abstract
This paper presents a reliability study of a 1.2Â kV SiC MOSFET under HTRB (High Temperature Reverse Bias stress by the photon emission (PE) and the spectral photon emission (SPE) techniques. The electrical characteristics analysis suggests failures related to the PN junction degradation. This hypothesis is confirmed by the PE and SPE techniques.
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Authors
N. Moultif, E. Joubert, M. Masmoudi, O. Latry,