Article ID Journal Published Year Pages File Type
4971647 Microelectronics Reliability 2017 5 Pages PDF
Abstract
This paper clarifies the shoot-through mechanism and investigates the impact of the next generation IGBTs on the inverter reliability. The influence of the internal capacitance of IGBT including stray inductance on inverter reliability is experimentally confirmed.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications
Authors
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