| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971660 | Microelectronics Reliability | 2017 | 7 Pages |
Abstract
The purpose of this paper is to present a complete analysis of the gate leakage-current behaviour during short-circuit (SC) fault operation of 1200Â V SiC MOSFETs from five different manufacturers including planar and trench-gate structures. Ruggedness and gate leakage level are evaluated in function of the chip size. Finally, the gate leakage current is modelled and the robustness tested.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
F. Boige, F. Richardeau,