Article ID Journal Published Year Pages File Type
4971789 Microelectronics Reliability 2016 7 Pages PDF
Abstract
This work developed a statistical model of row hammering failures based on experimental results obtained with commodity DDR3 SDRAMs of 3 × nm technology. The statistical distribution for the failing rows with respect to the number of hammerings matched the normal distribution. The means μHMR and standard deviations σHMR of the number of hammerings that cause row hammering failure were apparently different among three different manufacturers. The means of the manufacturers varied by more than 200% and could be sufficiently used to characterize the reliability of the device from a row hammering stress perspective. Based on the derived statistical model, the failed parts-per-million (ppm) was calculated to give, on average, 164.6, 82.6 and 22.2, respectively, for the manufacturers.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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