| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971821 | Microelectronics Reliability | 2016 | 4 Pages |
Abstract
Using the radiation test procedure as a one of technology stage, the assessment of total ionizing dose (TID) hardness was done for test structures, which were fabricated in conventional 65Â nm CMOS technology.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
L.N. Kessarinskiy, G.G. Davydov, D.V. Boychenko, A.S. Artamonov, A.Y. Nikiforov, I.B. Yashanin,