Electromagnetic susceptibility characterization of double SOI device

Under a research project of monolithic pixel detectors, a double silicon on insulator (DSOI) structure was introduced based on fully depleted SOI (FDSOI) technology. It not merely integrates the sensor and readout circuit on the same processed wafer, but also increases radiation tolerance. Electromagnetic susceptibility (EMS) is also an important reliability issue in pixel detectors. The readout circuit should avoid false signal generation due to coupled noise from the substrate. This paper evaluates the performance of DSOI devices regarding total ionizing dose (TID) effect compensation in transistors by applying a negative bias to the middle silicon layer, and evaluates the electromagnetic susceptibility of the substrate by a ring oscillator. The experiment results show that the DSOI device is able to compensate for TID, and the threshold voltage and leakage current are recoverable. However, the reduction of TID effect on the DSOI device is at the expense of increasing susceptibility to electromagnetic interference (EMI) on the substrate.