Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4971837 | Microelectronics Reliability | 2016 | 5 Pages |
Abstract
The investigations on the nanowire width (W) dependence of memory performance including P/E (programming and erasing) speed, data retention time and endurance characteristics in nanowire SONOS flash memory have been performed through the measurement and the device simulation. From measured results, a narrow device has advantages in terms of a fast P/E speed and the endurance characteristics. However, a narrow device has disadvantage in terms of the decreased data retention time. Another disadvantage of a narrow device is expected to the large power consumption due to large GIDL (Gate Induced Drain Leakage) current. The device simulation was performed to explore the causes for a fast P/E speed, an enhanced endurance characteristics and the reduced data retention time in narrow devices.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Jin Hyung Choi, Chong Gun Yu, Jong Tae Park,