Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4971876 | Microelectronics Reliability | 2016 | 6 Pages |
Abstract
This paper proposes a novel mission-profile-based reliability analysis approach for stress on bond wires in Silicon Carbide (SiC) MOSFET power modules using statistics and thermo-mechanical FEM analysis. In the proposed approach, both the operational and environmental thermal stresses are taken into account. The approach uses a two-dimension statistical analysis of the operating conditions in a real one-year mission profile sampled at time frames 5Â min long. For every statistical bin corresponding to a given operating condition, the junction temperature evolution is estimated by a thermal network and the mechanical stress on bond wires is consequently extracted by finite-element simulations. In the final step, the considered mission profile is translated in a stress sequence to be used for Rainflow counting calculation and lifetime estimation.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
A.S. Bahman, F. Iannuzzo, F. Blaabjerg,