Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
541645 | Microelectronics Journal | 2014 | 5 Pages |
Abstract
The design and measurement results of a micro-power successive approximation charge redistribution ADC implemented in CMOS 180 nm technology are presented. The project has been optimized for very low area occupancy in order to utilize it in multichannel neural signal recording pixel systems for future application. The design has been fabricated, experimentally characterized and it exhibits good performance, especially from the silicon area occupation point of view. The presented converter achieves 500 kS/s sampling rate with ENOB of 6.54 at 4.45 μW and occupies only 90 μm×95 μm of silicon area.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Piotr Otfinowski, Pawel Grybos,