Article ID Journal Published Year Pages File Type
541650 Microelectronics Journal 2014 8 Pages PDF
Abstract

The current work focuses on presenting specific Hall cells with high performance, and their corresponding parameters. The design, integration, measurements and model development for their performance assessment are necessary stages considered in the generation of the Hall cells. Experimental results regarding the Hall cells absolute sensitivity, offset and offset temperature drift are provided for two particular structures exhibiting the best behavior in terms of maximum sensitivity and lowest offset. Three-dimensional physical simulations were performed for the structures and the Hall mobility was extracted. Representation of the inverse of the geometrical correction factor for the Greek-cross Hall cell is also provided.

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Physical Sciences and Engineering Computer Science Hardware and Architecture
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