Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
541736 | Microelectronics Journal | 2014 | 5 Pages |
•CMOS active pixel which uses buried channel SOI NMOS Source Flower (SF) is studied.•CMOS active pixel optimized by using in-pixel buried-channel SOI transistor.•The dark random noise of the pixel with buried channel SOI NMOS SF is reduced under the radiation.•The pixel with buried-channel SOI NMOS SF has an improved output swing under the radiation.
A CMOS active pixel with pinned photodiode which used in-pixel buried-channel (BC) transistor has been reported, and the characteristic of CMOS image sensor with in-pixel buried-channel transistor was carried out. In this paper, we have a research on a hybrid bulk/silicon-on-insulator (SOI) CMOS active pixel with pinned photodiode which use buried channel SOI NMOS Source Flower (SF) by simulation. We study the basic characteristics of buried-channel SOI NMOS and the characteristics of CMOS active pixel optimized by using in-pixel buried-channel SOI transistor under radiation. The results show that, compared to the conventional active pixel with the standard surface-channel (SC) SOI NMOS SF, the dark random noise of the pixel which uses in-pixel buried channel SOI NMOS SF can be reduced under the radiation and the output swing is improved.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slide