Simulation methodology for dose effects in lateral DMOS transistors

Due to the increasing interest on laterally diffused MOS (LDMOS) transistors as a part of power electronics in the high energy physics (HEP) experiments, the effect of total ionising dose (TID) on their electrical performances has been experimentally measured. The analysis of the experimental results requires the aid of physics-based simulations to study the impact of TID effects on the LDMOS drift oxide layer. In this work, a simulation methodology is developed in order to analyse the changes in the electric field distribution as a consequence of the TID induced trapped charge, and its relationship with the technological parameters and the bias conditions. The simulation results are compared with the experimental data.