| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 541792 | Microelectronics Journal | 2013 | 6 Pages |
Abstract
In this paper, measured and calculated non-isothermal DC characteristics of silicon carbide MPS devices are investigated, with special attention paid on critical parameters, such as maximum current and junction temperature at which a thermal runaway may occur. Electro-thermal transient states in single MPS devices (forward surge current tests) and in the simple Greatz rectifier are simulated and compared to measurements. Various electro-thermal models of SiC SBDs, with a simplified, effective procedure for calculations of junction temperature are proposed.
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Authors
Aneta Hapka, Wlodzimierz Janke,