Electrical performance study of 25 nm Ω-FinFET under the influence of gamma radiation: A 3D simulation

In this research paper, a 3D process simulation of 25 nm n-channel Ω-FinFET and the effect of Gamma radiation on device characteristics have been studied. Device simulations are carried out under the influence of Gamma radiation under varying does conditions from 100 Krad (SiO2) to 10 Mrad (SiO2). Effects of Gamma radiation on the threshold voltage, transfer characteristics, drive current, off-state leakage current and subthreshold characteristics have been studied. Extracted parameters for virgin and irradiated devices have been compared in order to understand the degradation in the electrical characteristics of the Ω-FinFET under study. Simulation results under the low drain and high drain bias has been reported and discussed. It is found that Ω-FinFET delivers better performance under irradiation as compared with conventional single gate MOS structures. Ω-FinFET is shown to be significantly tolerant to gamma radiation upto dose of 5 Mrad (SiO2). In addition, the influence of quantum effects on this nanoscale device is investigated in detail. Sentaurus simulation results obtained has been compared with the reported experimental data.