Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
541945 | Microelectronics Journal | 2013 | 5 Pages |
Abstract
The behavioral modeling of active devices using pathological nullor–mirror elements has shown advantages comparing with their representations using nullor elements only. In order to model the terminal characteristic of active devices containing current or voltage differencing properties, the pathological representations of current and voltage differencing cells are presented. Each proposed model includes the non-ideal effects of input and output parasitics and transfer characteristics. They are used to model some active devices with the consideration of their non-ideal effects. Symbolic nodal analyses (NA) using the non-ideal models of active devices are given to demonstrate the usefulness of the proposed models.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Wei-Chun Lin, Hung-Yu Wang, Chih-Yi Liu, Tsair-Fwu Lee,