Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
542244 | Microelectronics Journal | 2010 | 5 Pages |
Abstract
Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion charge density. With these modifications, the compact model is shown to reproduce C–V and I–V curves of double-gate MOSFETs consistent with those obtained from those measured from experimental FinFET hardware.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Wei Wang, Huaxin Lu, Jooyoung Song, Shih-Hsien Lo, Yuan Taur,