Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
542281 | Microelectronics Journal | 2007 | 6 Pages |
Abstract
In the first part of this paper, we present simulations of single-electron transistor (SET) output characteristic using Maple. Typical SET I–V characteristics and charge energies curves are presented by developing Maple programs. In the second part of this work, we develop a new model without considering quantum effects using the superposition theorem, transfer function and Laplace transformer. Finally, we propose a new bloc using SIMPLORER 7.0 simulator to modulate quantum effects in the SET island. This model is based on a parallel analog–digital converter.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
A. Boubaker, Na. Sghaier, M. Troudi, A. Kalboussi, N. Baboux, A. Souifi,