Article ID Journal Published Year Pages File Type
542281 Microelectronics Journal 2007 6 Pages PDF
Abstract

In the first part of this paper, we present simulations of single-electron transistor (SET) output characteristic using Maple. Typical SET I–V characteristics and charge energies curves are presented by developing Maple programs. In the second part of this work, we develop a new model without considering quantum effects using the superposition theorem, transfer function and Laplace transformer. Finally, we propose a new bloc using SIMPLORER 7.0 simulator to modulate quantum effects in the SET island. This model is based on a parallel analog–digital converter.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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