| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542317 | Microelectronics Journal | 2007 | 4 Pages |
Abstract
Hybrid organic-on-inorganic heterostructures employing phthalocyanine molecular semiconductor and doped silicon were fabricated using standard microelectronic processes. Current-vs-voltage characteristics display rectifying behavior of such heterostructures, which becomes more pronounced if n-type phthalocyanine layer is utilized. Competitive influence of phthalocyanine/metal and phthalocyanine/p-Si interface on electrical transport in the devices is discussed. Heterostructures with lead phthalocyanine layer show photoconductive properties in the NIR domain when illuminated through p-Si side.
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Authors
Georgy L. Pakhomov, Evgeny S. Leonov, Alexander Yu. Klimov,