| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542320 | Microelectronics Journal | 2007 | 5 Pages |
Abstract
We have investigated electrical properties of a chalcogenide-based device with naturally oxidized Al electrodes. Intermediate-resistance (IR) states exhibited by current-voltage (I-V) characteristics, dynamic resistance change as a function of pulse height and decay behavior from a low-resistance state of such a device make multi-state storage feasible. These IR states could be induced by electrical pulses and stable in a period. Device resistances of such a series of states might be related to the number of dendrite filaments across the chalcogenide channel.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
You Yin, Hayato Sone, Sumio Hosaka,