| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542334 | Microelectronics Journal | 2007 | 6 Pages |
Abstract
The most recent development together with some challenging opportunities on barrier layers for copper metallization has been reviewed. This review study mainly focuses on the technology trends in interconnect metallization, with emphasis on barrier layer materials, mechanism that dominates diffusion in barrier layer materials, and promising candidate barrier layers for copper metallization in LSIs. The applicability of different materials as diffusion barriers in copper-based interconnects has also been assessed for practical usage.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
H.Y. Wong, N.F. Mohd Shukor, N. Amin,