Article ID Journal Published Year Pages File Type
542379 Microelectronics Journal 2006 5 Pages PDF
Abstract

An analytical model for threshold voltage (Vth) and minimum gate voltage (Vtl) of Si/SiGe MOS-gate delta-doped HEMT is presented in this letter. The model is valid for any width of the delta-doped layer and any distance of the layer from the Si/SiO2 interface. Using the model, Vth and Vtl of a Si/SiGe MOS-gate delta-doped HEMT of known dimensions are calculated. To investigate the effect of variation of the width of the delta-doped layer, the threshold voltage and the minimum gate voltage have been plotted against the width. Medici™ simulation have been performed on the same device to evaluate Vth and Vtl for different delta-doped layer widths. The simulation results are in good agreement with the results found using the analytical model.

Keywords
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
, ,