| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542415 | Microelectronics Journal | 2006 | 7 Pages |
Abstract
An experimental infrared method for the thermal characterisation of semiconductor devices during fast transient operation, in the range from a few microseconds and up to some milliseconds, is presented. The features which make it suitable and convenient, particularly for use with power electronics applications are pointed out; its time and space resolution are illustrated by means of properly chosen examples. The considered solution qualifies as a very versatile and powerful tool in many diverse lines of investigation.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard Wachutka,