| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542463 | Microelectronics Journal | 2009 | 4 Pages |
Abstract
We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb2) exploiting an As–Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature.
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Authors
P.J. Carrington, V.A. Solov’ev, Q. Zhuang, S.V. Ivanov, A. Krier,