Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
542482 | Microelectronics Journal | 2009 | 4 Pages |
Abstract
In this paper, we show the use of an optimally parameterized empirical potential of the Abell–Tersoff type and demonstrate that we can obtain a deep level of insight into the properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents and that the theoretical behaviour appears to be substantiated by experimental evidence of growth of InAs self-assembled quantum dots capped by GaSbAs.
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Authors
V. Haxha, R. Garg, M.A. Migliorato, I.W. Drouzas, J.M. Ulloa, P.M. Koenraad, M.J. Steer, H.Y. Liu, M.J. Hopkinson, D.J. Mowbray,