Article ID Journal Published Year Pages File Type
542482 Microelectronics Journal 2009 4 Pages PDF
Abstract

In this paper, we show the use of an optimally parameterized empirical potential of the Abell–Tersoff type and demonstrate that we can obtain a deep level of insight into the properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents and that the theoretical behaviour appears to be substantiated by experimental evidence of growth of InAs self-assembled quantum dots capped by GaSbAs.

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Physical Sciences and Engineering Computer Science Hardware and Architecture
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