Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
542510 | Microelectronics Journal | 2009 | 5 Pages |
Abstract
Ultra-thin single-crystalline Si-QW with epitaxial insulator (Gd2O3) as the barrier layers were grown by a novel approach based on cooperative vapor phase MBE on Si wafer with sharp interfaces between well and barriers. The current-voltage characteristics obtained for such structure exhibits negative differential resistance at lower temperature, making them a good candidate for resonant tunneling devices.
Related Topics
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Computer Science
Hardware and Architecture
Authors
Apurba Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V.V. Afanas'ev, A. Stesmans, A. Fissel, H.J. Osten,